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Silver Gallium Sulfide and Silver Gallium Selenide
(Table of Material Properties appears below)

 

 

AgGaSe2 (AGSe) has been demonstrated to be an efficient frequency doubling crystal for infrared radiation such as the 10.6μm output of CO2 lasers(11). It has also been shown to be an excellent crystal for nonlinear three-wave interactions. With suitable pump lasers, AGSe optical parametric oscillators (OPS's) can produce continuously tunable radiation over a wide range of wavelengths in the infrared. Using a 2.05μm pump laser, an optimally designed AGSe OPO is tunable from about 2.5 to 12μm (26). The output range can be extended by sum or difference frequency mixing (SFM/DFM). Residual e ray absorption centered at 2.1μm may limit average power handling.

This crystal has a high nonlinear coefficient, high damage threshold, and a wide transmission range. It also has low optical absorption and scattering and low wavefront distortion. Among commercially available crystals, AGSe has the highest figure of merit for nonlinear interactions in the near and deep infrared. The availability of this crystal has stimulated new activities exploiting its many interesting properties. Potential applications include wavelength selectable medical procedures, LIDAR, a solid-state equivalent of an IR dye laser, and a wide variety of spectroscopic applications. It is useful for high performance IR waveplates.

A closely related crystal, AgGaS2 (AGS), is also available. Its bulk quality is excellent across the transmission range, except for residual e ray absorption centered around 1.8μm. Surface absorption may increase with time, but the behavior is now greatly improved over that of earlier crystals. The phasematching and nonlinear optical properties of AGS allow various SFM/DFM interactions from the visible to mid-IR. these include non-critically phase matched DFM using selected wavelengths (available from tunable dye and Ti:sapphire lasers) and OPO's pumped with commonly available Nd:YAG lasers.

Click HERE FIRST for help with your frequency conversion application.


Properties of AgGaSe2 and AgGaS2(a)
 
AgGaS2  
(AGS)
AgGaSe2  
(AGSe)
Crystal Data
 
 
Structure type(1) Chalcopyrite Chalcopyrite
Crystal Symmetry and Class Tetragonal,2m Tetragonal,2m
Space Group I2d I2d
Lattice Constants (angstroms) a=5.7566 +/-0.0008 
c=10.3016 +/-0.0013
a=5.99202 +/-0.0018(2) 
c=10.88626 +/-0.0003(2)
Density, g/cc 4.702 5.700
Cleavage (112) good (112) good
Optical Properties
 
 
Optical Transmission (um)(3) 
<3cm-1
0.50 to 13.2 0.78 to 18.0
Energy Gap(eV),Absorption edge(um)
 
 
E perpendicular to c 2.655, 0.467(21) 1.713, 0.724
E parallel to c 2.572, 0.482(22) 1.689, 0.734
Indices of refraction at (um) no(4), ne(4) no(5), ne(5)
0.589 2.5834, 2.5406 ---
1.064 2.4521, 2.3990 2.7010, 2.6792
3.0 2.4080, 2.3545 2.6245, 2.5925
5.3 2.3945, 2.3408 2.6134, 2.5808
10.6 2.3472, 2.2934 2.5912, 2.5579
12.0 2.3266, 2.2716 ---
13.5 --- 2.5731, 2.5404
Wavelength where no=ne, um 0.4974(6) 0.811(12)
dn/dT, 10-6/°C
 
 
1.06um dno/dT= 167 
dne/dT= 176
dno/dT= 98(c) 
dne/dT= 66(c)
3.39um dno/dT= 154 
dne/dT= 155
dno/dT= 74 +/-10(30) 
dne/dT= 43 +/-10(30)
10.6um dno/dT= 149(c) 
dne/dT= 156(c)
dno/dT= 58(c) 
dne/dT= 46(c)
d(ne2- n)/dT @ pm 
for type I SHG 10.6um
--- +/- 1.1(9), -1.2(c)
Fresnel Refection Loss per surface
 
 
1.06um 17% 21%
10.6um 16% 19%
Absorption Coeff.  (cm-1)(g)
 
 
1.06um (random) < 0.01  < 0.02 
1.8um (e ray) < 0.10  < 0.02 
2.1um (e-ray) < 0.02  < 0.05 
10.6um (random) 0.6(b)  < 0.02 
Laser Damage Threshold(g,h)
 
 
1.06um, ~10ns pulse (MW/cm2) sfc 25; bulk >500 sfc 25
2.09um, ~50ns pulse (J/cm2)(25) --- sfc 0.5-3.0
10.6um, ~10ns pulse (MW/cm2)(25) --- sfc 20-30
10-20ns pulse (J/cm2)(25) --- sfc 0.1-0.2; bulk ~0.2
200ns pulse (J/cm2)(31) --- sfc ~1
NLO Susceptibility d36, pm/V
 
 
SHG at 1.064um 17.5(28) ---
SHG at 10.6um 11.2(28) 33(28)
Phasematching Range (,um)
 
 
Type I SHG 1.8 to 11.2(4) 3.1 to 12.8(5)
Type II SHG 2.5 to 7.7(4) 4.7 to 8.1(5)
Phasematching Angle 
10.6um Type I SHG
71.5(4) 57.0(c)
Birefringence Walkoff @5.3um 0.76(27,c) 0.67(11)
Pockels Coeffs. 
(Linear Electro-Optic)
 
 
r41T (pm/V) 4.0 +/-0.2(10) 4.5 at 1.15um(12)
r63T (pm/V) 3.0 +/-0.1(10) 3.9 at 1.15um(12)
Optical Gyration Coeff. (10-3 deg)
 
 
0.4974um 3.88(6) ---
0.5045um 3.63(13) ---
Electrogyration Coeff 
41(10-12) at 0.498um
2.03(14) ---
Mechanical Properties
 
 
Elastic Compliances, (TPa-1)(10,29)
 
 
s11 26.2 26.6
s12 -7.7 -14.9
s13 -14.5 -9.1
s33 35.9 31.4
s44 41.5 46.1
s66 32.5 75.2
Young's Modulus, 1/s11E(GPa) 38.2 37.6
Poisson's Ratio, -s12/s11 0.29 0.56
Elastic Stiffnesses, (GPa)(10,29)
 
 
c11 87.9 89.8
c12 58.4 65.7
c13 59.2 45.1
c33 75.8 58.0
c44 24.1 21.7
c66 30.8 13.3
Thermal Properties
 
 
Melting point (°C) 997 851(11)
Thermal Expansion Coeff.(10-6/°C)
 
 
Along c axis 12.5(15) 16.8(16)
Perpendicular to c axis -13.2(15) -7.8(16)
Phase transitions none >RT none >RT
Heat Capacity (J/mole/°C) 99.8(17) 97 +/-5 
Specific Heat (J/cc/°C) 1.9 1.7
Hmelt (KJ/mole) 53.6(18) 58.6(18)
Thermal Conductivity (W/cm/°C) 
(nearly isotropic)
0.015 0.011
Electrical Properties
 
 
Typical dark Resistivity (ohm-cm) >1011 >1010
Relative dielectric constant @25MHz
 
 
11S/o 10(10) 10.5(7)
33S/o 14(10) 12.0(7)
Piezoelectric Coefficients, (pC/N)
 
 
d14 + (10) 9.0(7)
d36 + (10) 3.7(7)
Electromechanical Coupling Factors
 
 
k14 --- 0.098(7)
k36 --- 0.040(7)
 
          
           
; 
          
           
; 

Footnotes

a) Unreferenced data were determined at Cleveland Crystals, Inc.

b) AGS has a high transmission to 8.3um.

c) Calculated from a combination of Cleveland Crystals data, and data referenced herein.

d) The indicies of refraction for AGS(4) were fitted to Sellmeier equations after ref.(24)

e) The indicies of refraction for AGSe(5) were fitted to Sellmeier equations after ref.(27)

f) Calculated value.

g) Recent experimental data, subject to change with crystal development.

h) NOTE: All damage threshold information is provided as a guide only. NO warranty, expressed or implied, is made with regard to damage threshold. Users are encouraged to establish safe operating conditions for their laser system components.


References
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 2) B.Tell and H.M. Kasper,Phys. Rev. B4,4455-9(1971)

 3) G.C. Bahr and R.C. Smith, Phys. Status Solidi
a13,157-68(1972)

 4) G.D. Boyd, H.M. Kasper, and J.H. McFee, IEEE J. Quantum
Electron, 7,563-73(1971)

 5) G.D. Boyd, H.M. Kasper, J.H. McFee, and F.G. Storz, IEEE
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    8,900-908(1972)

 6) M.V. Hobden, Acta Cryst. A24, 676-80(1968)

 7) H. Horinaka, H. Nozuchi, H. Sonomura, ans T. Miyauchi,
Jpn. J. Appl.Phys. 22,546(1979)

 8) G.C. Bahr, D.K. Ghosh, and D. Schmitt, Appl.
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 9) N.P. Barnes R.C. Eckhardt, D.J. Gettemy, and L.B.
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    1074-6(1979)

10) Landolt-Boernstein, New Series, K.H. and A.M. Hellwege,
Editors, Springer, Berlin

    Vol.III-11(1979),III-18(1984)

11) R.C. Eckardt, Y.X. Fan, R.L. Beyer, R.K. Route, R.S.
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    Appl. Phys. Lett. 47,786-8(1985)

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    Chem. Abstr. 99,148685s(1983)

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16) G.W. Iseler, J. Cryst. Growth 41, 146-50(1977)

17) H.Neumann, G. Kuhl, and W Moller, Cryst. Res. Technol. 20,
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18) L.A. Mechkovski, S.A. Alfer, I.V. Bodnar, and A.P. Bologa,
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    729-32(1985)

19) J.D. Beasley, Applied Optics, to be published in 1994

20) V.P. Zhuze, V.M. Sergeeva, and E.L. Shtrum, Sov. Phyys. Tech.
Phys. 3, 1925-38(1958)

21) L.K. Samanta, D.K. Ghosh, and G.C. Bahr, Phys. Status.
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22) I.V. Bidnar and A.I. Lukomskii, Phys. STatus Solidi, a98,
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24) Y.X. Fan, R.C.Eckardt and R.L. Beyer, Appl. Phys. Lett. 45,
313-15(1984)

25) R.C.Eckardt and R.L. Beyer "Measurement of Nonlinear Optical
Componenets

    by Phase Matched Harmonic Generation", SPIE
O-E LASE Proceeding 1991, 119; Also

    C.L. Marquardt, NRL, private communication

26) "Broadly Tunable Infrared Parametric Oscillation Using
AgGaSe2", R.C.

    Eckardt, Y.X. Fan, R.L. Beyer, C.L. Marquardt,
M.E. Storm, and L. Esterowitz, Appl.

    Phys. Lett. 49, 608-10 (1986)

27) H. Kildal and J.C. Mikkelsen, Opt. Commun. 9, 315-18(1973).
Nonlinear data have been

    summarized and evaluated in ref. 28.

28) "Simplified Characterization of Uniaxial and Biaxial Nonliner
Optical Crystals: A plea

    for Standardization of Nomenclature and
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    Electron, 28, 2057-74(1992)

29) D. Eimerl, J. Marion, E.K. Graham, H.A. Mckinstry, and S.
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    Electron. 27, 142-5(1991)

30) N.P. Barnes, D.J. Gettemy, J.R. Hietanen, and R.A. Iannini,
Appl. Opt. 28, 5162-8(1989)

    measurement at 3.39um

31) Laser Science Inc, personal communication, 1983

All Material on this site Copyright 1996 Cleveland Crystals, Inc